Method of making a resistive random access memory

A method of forming a resistive random access memory cell, comprising:

• forming a first electrode;
• forming a barrier layer comprising a metal oxide over the first electrode;
• forming a resistive switching material over the barrier layer by atomic layer deposition,
• wherein forming the resistive switching material by atomic layer deposition comprises exposing a deposition surface to a precursor comprising a pnictogen element;
• forming a metallic layer over the resistive switching material by atomic layer deposition;
• and
• wherein the barrier layer and the resistive switching material are interposed between the first electrode and the metallic layer.

A resistive random access memory device comprising a memory cell, the memory cell comprising:

• a first electrode comprising TiN;
• metallic layer comprising a pnictogen element;
• and
• a resistive switching material comprising an oxide of a pnictogen element,
• wherein the resistive switching material is interposed between the first electrode and the metallic layer,
• wherein the resistive random access memory device comprises a plurality of first electrodes formed at different vertical levels, and
• wherein the device further comprises a second electrode including a vertically-extending conductive rod.

A method of forming a random access memory cell, comprising:

• providing a first electrode;
• forming by atomic layer deposition a resistive switching material comprising a nanolaminate layer comprising a plurality of alternating elemental pnictogen layers and pnictogen oxide layers;
• and
• providing a second electrode,
• wherein the resistive switching material is interposed between the first electrode and the second electrode.

A method of fabricating a resistive random access memory cell, comprising:

• providing a substrate;
• providing a first electrode on the substrate;
• forming via atomic layer deposition a resistive switching material over the first electrode, wherein the resistive switching material comprises an oxide;
• and
• depositing via atomic layer deposition a metallic layer on the resistive switching material, wherein the metallic layer comprises:
• a metal;
• and
• a pnictogen chosen from the group consisting of As, Bi, Sb, and P,
• wherein depositing via atomic layer deposition comprises exposing the substrate to a precursor comprising the pnictogen between exposures to a precursor comprising the metal.

A method of fabricating a resistive random access memory cell, comprising:

• providing a substrate;
• providing a first electrode on the substrate;
• forming via atomic layer deposition a resistive switching material over the first electrode, wherein the resistive switching material comprises a non-pnictogen oxide;
• and
• doping the oxide with a metallic material comprising:
• a metal;
• and
• a pnictogen chosen from the group consisting of As, Bi, Sb, and P.

A method of fabricating a resistive random access memory cell, comprising:

• providing a substrate;
• providing a first electrode on the substrate;
• depositing via atomic layer deposition a metallic layer over the first electrode, wherein the metallic layer comprises a pnictogen chosen from the group consisting of As, Bi, Sb, and P,
• wherein depositing via atomic layer deposition comprises exposing the substrate to a precursor comprising the pnictogen while depositing the metallic layer;
• and
• forming via oxidation of the metallic layer a resistive switching material over the first electrode.