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US 9,520,561 B1Granted
Controlling on-state current for two-terminal memory
AssigneeCrossbar, Inc.
InventorsKuk-Hwan Kim, Ping Lu, Chen-Chun Chen, Sung Hyun Jo
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Abstract
Provision of fabrication, construction, and/or assembly of a memory device including a two-terminal memory portion is described herein. The two-terminal memory device fabrication can provide enhanced capabilities in connection with precisely tuning on-state current over a greater possible range.
Claims20
A method for fabricating a memory device, comprising:
- forming a two-terminal memory layer above a substrate layer;
- including in the two-terminal memory layer an ohmic contact layer above the substrate layer, a resistive layer above the ohmic contact layer, a resistive switching material (RSM) layer above the resistive layer, and an active metal layer above the RSM layer;
- including a first semiconductor material layer in an amorphous phase in the resistive layer;
- and
- including a second semiconductor material layer in a polycrystalline phase in the resistive layer situated above the first semiconductor layer.
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A method of fabricating a non-volatile memory, comprising:
- providing a substrate having a complementary metal oxide semiconductor (CMOS) device within the substrate;
- forming a dielectric layer over the substrate;
- forming a first metal layer over the dielectric layer;
- forming a resistive layer over the first metal layer, wherein forming the resistive layer further comprises forming an amorphous phase material overlying the first metal layer and forming a polycrystalline phase material overlying the amorphous phase material;
- forming a resistive switching material (RSM) layer over the resistive layer;
- and
- forming an active metal layer over the RSM layer.
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Dependencies are inferred from the claim text.