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US 9,520,560 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorAoi Hidaka
Life of this patent
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Abstract
A semiconductor device according to an embodiment comprises a base layer. A material layer is provided on the base layer. A lower layer portion is provided in lower parts of trenches or holes formed in the material layer and has a crystal structure in a direction not perpendicular to a surface of the base layer. An upper layer portion is provided on the lower layer portion in the trenches or the holes and has a crystal structure in a direction substantially perpendicular to the surface of the base layer.
Claims12
A semiconductor device comprising:
- a base layer;
- an interlayer dielectric film provided directly on the base layer;
- a lower layer portion provided in lower parts of trenches or holes in the interlayer dielectric film and having a crystal structure in a direction not perpendicular to a surface of the base layer;
- and
- an upper layer portion provided on the lower layer portion in the trenches or the holes and having a crystal structure in a direction substantially perpendicular to the surface of the base layer.
2 more elements
Dependencies are inferred from the claim text.