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US 9,520,556 B2Granted
Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHideki Horii, Jeonghee Park, Sugwoo Jung
Life of this patent
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Abstract
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a selection element, a lower electrode pattern provided on the selection element to include a horizontal portion and a vertical portion; and a phase-changeable pattern on the lower electrode pattern. The vertical portion may extend from the horizontal portion toward the phase-changeable pattern and have a top surface, whose area is smaller than that of a bottom surface of the phase-changeable pattern.
Claims10
A semiconductor device comprising:
- a substrate, on which a plurality of memory cells are provided;
- and
- an insulating pattern provided on the substrate to define a feature of the memory cells,
- wherein each of the memory cells comprises:
- a selection element on the substrate;
- a lower electrode pattern provided on the selection element to have a horizontal portion and a vertical portion;
- a phase-changeable pattern on the lower electrode pattern;
- a protection pattern interposed between the lower electrode pattern and the insulating pattern and extended between a side surface of the phase-changeable pattern and the insulating pattern, the protection pattern being in contact with the lower electrode pattern;
- and
- a spacer pattern between the protection pattern and the side surface of the phase-changeable pattern,
- wherein the vertical portion is extended from the horizontal portion toward the phase-changeable pattern and has a top surface having an area smaller than that of a bottom surface of the phase-changeable pattern.
8 more elements
A semiconductor device comprising:
- a substrate;
- a selection device layer on the substrate;
- an ohmic pattern on the selection device layer;
- a phase-changeable pattern on the ohmic pattern;
- a lower electrode pattern provided between the ohmic pattern and the phase-changeable pattern, the lower electrode pattern comprising a horizontal portion covering a portion of a top surface of the ohmic pattern and a vertical portion extending from the horizontal portion and being in contact with the phase-changeable pattern, the vertical portion exposing a bottom surface of the phase-changeable pattern at both sides thereof;
- a first protection pattern extending from a side surface of the lower electrode pattern to a side surface and the bottom surface of the phase-changeable pattern;
- and
- a second protection pattern extending from other side surface of the lower electrode pattern to other side surface and the bottom surface of the phase-changeable pattern, the first and second protection patterns configured for selective etching of the lower electrode pattern,
- wherein the bottom surface of the phase-changeable pattern on the first protection pattern is positioned at a level that is the same as or higher than that of a top surface of the vertical portion, and
- the bottom surface of the phase-changeable pattern on the second protection pattern is positioned at a level that is higher than the bottom surface of the phase-changeable pattern on the first protection pattern.
7 more elements
Dependencies are inferred from the claim text.