Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact

A system, comprising:

• a memory array comprising a memory cell, wherein the memory cell comprises a memory storage component comprising an “L” shape, wherein the memory storage component comprises:
• a lower approximately horizontal portion, wherein the lower approximately horizontal portion is in contact with a first electrode line;
• and
• an approximately vertical portion extending from the lower approximately horizontal portion, wherein the approximately vertical portion extends vertically from the lower approximately horizontal portion and is in contact with a second electrode line;
• a processor to initiate a memory access command to access the memory array;
• and
• a memory controller configured to process the memory access command from the processor.