Methods of forming a magnetic electrode of a magnetic tunnel junction and methods of forming a magnetic tunnel junction

A method of forming a magnetic electrode of a magnetic tunnel junction, comprising:

• forming non-magnetic MgO-comprising material over conductive material of the magnetic electrode being formed;
• forming amorphous metal over the MgO-comprising material, the amorphous metal comprising an alloy of a) at least one of Mo and Cr, and at least one of Fe, Co, and Ni, or b) Al and Ni;
• forming amorphous magnetic electrode material comprising Co and Fe over the amorphous metal, the amorphous magnetic electrode material being devoid of B;
• forming non-magnetic tunnel insulator material comprising MgO directly against the amorphous magnetic electrode material, the tunnel insulator material being devoid of B;
• and
• after forming the tunnel insulator material, annealing the amorphous Co and Fe-comprising magnetic electrode material at a temperature of at least 250° C. to form crystalline Co and Fe-comprising magnetic electrode material from an MgO-comprising surface of the tunnel insulator material, the crystalline Co and Fe-comprising magnetic electrode material being devoid of B.