US 9,520,552 B2 · DIOMEJ cell device

Abstract

Embodiments of the technology implement DIOMEJ cells. In one embodiment, a DIOMEJ cell includes: an MEJ that includes, a ferromagnetic fixed layer, a ferromagnetic free layer, and a dielectric layer interposed between said fixed and free layers, where the fixed layer is magnetically polarized in a first direction, where the free layer has a first easy axis that is aligned with the first direction, and where the MEJ is configured such that when a potential difference is applied across it, the magnetic anisotropy of the free layer is altered such that the relative strength of the magnetic anisotropy along a second easy axis that is orthogonal to the first easy axis, as compared to the strength of the magnetic anisotropy along the first easy axis, is magnified for the duration of the application of the potential difference; and a diode, where the diode and the MEJ are arranged in series.

Claims13

Dependent claims

A DIOMEJ cell apparatus comprising:

(a) an access device;
and
(b) a magnetoelectric junction coupled to the access device, the magnetoelectric junction comprising:
(i) a ferromagnetic fixed layer magnetically polarized in a first direction;
(ii) a ferromagnetic free layer with an easy magnetic axis that is substantially aligned with the first direction, such that the ferromagnetic free layer can adopt a magnetic polarity that is either parallel with or anti-parallel with the first direction;
and
(iii) a non-magnetic layer interposed between said ferromagnetic fixed layer and said ferromagnetic free layer;
(iv) wherein the coercivity of the ferromagnetic free layer is reduced when a potential difference is applied across the magnetoelectric junction;
and
(c) wherein the access device and the magnetoelectric junction are connected in series.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/458,451Filed 13 Aug 2014 · continuation

Priority

8 Sep 2012

Published

US 2016/0336375 A117 Nov 2016

Granted

13 Dec 2016

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10B 61/10
Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices: comprising components having two electrodes, e.g. diodes or MIM elements
G11C 11/161
Using elements in which the storage effect is based on magnetic spin effect: details concerning the memory cell structure, e.g. the layers of the…
G11C 11/1675
Auxiliary circuits: writing or programming circuits or methods
G11C 11/18
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor: using Hall-effect devices

Family

Application61/698,635Us provisional application · filed 8 Sep 2012

Application14/021,916Parent of this continuation · filed 9 Sep 2013

US 2016/0336375 A1Pre-grant publication · published 17 Nov 2016

US 8,841,739 B2Parent of this continuation

US 2014/0070344 A1Published application

US 9,520,552 B2This patent

From the US filing history. Foreign family members aren’t listed.

DIOMEJ cell device

Life of this patent

DIOMEJ cell device

Life of this patent

Abstract

Claims13