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US 9,520,551 B2Granted
Hall effect device
AssigneeInfineon Tecnologies AG
InventorsStefan Kolb, Markus Eckinger
Life of this patent
Estimating the term…
Abstract
A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
Claims13
A Hall effect device, comprising:
- an active Hall region in a semiconductor substrate, wherein the active Hall region comprises at least three triangular active sub-regions, and
- at least three terminal structures in each triangular active sub-region, each terminal structure comprising a switchable supply contact element and a sense contact element that are spatially distinct from one another,
- wherein each switchable supply contact element comprises a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal,
- wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region;
- and
- wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
3 more elements
A Hall effect device, comprising:
- an active Hall region in a semiconductor substrate, wherein the active Hall region comprises at least three triangular active sub-regions,
- at least three terminal structures in each triangular active sub-region, each terminal structure comprising a switchable supply contact element and a sense contact element, and
- a control circuit for controlling an operation of the Hall effect device;
- wherein each supply contact element comprises a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal,
- wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region;
- and
- wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements,
- wherein the control circuit is configured to apply a different phases of a spinning current operation to the terminal structures at the active Hall region, and
- wherein the control circuit is configured to selectively switch on one of the supply contact elements for feeding a biasing current in a predetermined current direction through the active Hall region, and to selectively switch off the remaining supply contact elements during each of the different phases of a spinning current operation.
6 more elements
A Hall effect device, comprising:
- an active Hall region in a semiconductor substrate, wherein the active Hall region comprises at least three triangular active sub-regions,
- at least three terminal structures in each triangular active sub-region, each terminal structure comprising a switchable supply contact element and a sense contact element, and
- a control circuit for controlling an operation of the Hall effect device,
- wherein each supply contact element comprises a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal,
- wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region;
- and
- wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements,
- wherein the control circuit is configured to apply a different phases of a spinning current operation to the terminal structures at the active Hall region, and
- wherein the control circuit is configured to apply a first to fourth phase of the spinning current operation to the terminal structures at the active Hall region, and to continuously cyclically rotate the biasing current direction through the active Hall region and to continuously cyclically rotate the measurement direction for detecting a Hall voltage at the pairs of sense contact elements.
6 more elements
Dependencies are inferred from the claim text.