Electronic device

An electronic device comprising:

• a variable resistance element including a variable resistance pattern including a first electrode layer and a second electrode layer that are separated from each other to receive a first current to flow through, and a variable resistance layer between the first and second electrode layers to include a storage layer exhibiting a variable magnetization that can be changed by the first current when above a required current value, a reference layer exhibiting a fixed magnetization and spaced from the storage layer, and a tunnel barrier layer between the storage and reference layers, wherein the variable resistance pattern shows different resistance values to the first current based on a direction of the variable magnetization relative to the fixed magnetization;
• and
• a switching assist structure, located adjacent to the variable resistance element, structured to receive a second current and to produce a magnetic field at the variable resistance pattern in response to the second current to assist a switching of the variable magnetization of the variable resistance pattern under a switching operation caused by the first current when under the required current value,
• wherein the switching assist structure is spaced from a side wall of the variable resistance pattern to surround the variable resistance pattern.

An electronic device comprising:

• a variable resistance element including a variable resistance pattern including a first electrode layer and a second electrode layer that are separated from each other to receive a first current to flow through, and a variable resistance layer between the first and second electrode layers to include a storage layer exhibiting a variable magnetization that can be changed by the first current when above a required current value, a reference layer exhibiting a fixed magnetization and spaced from the storage layer, and a tunnel barrier layer between the storage and reference layers, wherein the variable resistance pattern shows different resistance values to the first current based on a direction of the variable magnetization relative to the fixed magnetization;
• and
• a switching assist structure, located adjacent to the variable resistance element, structured to receive a second current and to produce a magnetic field at the variable resistance pattern in response to the second current to assist a switching of the variable magnetization of the variable resistance pattern under a switching operation caused by the first current when under the required current value,
• wherein the switching assist structure comprises:
• a plurality of ring-type conductive layers vertically spaced from one another along a direction from the first electrode layer to the second electrode layer of the variable resistance element;
• and conductive connectors electrically coupling the conductive layers.