Nitride semiconductor template and ultraviolet LED

Abstract

A nitride semiconductor template includes a Ga2O3 substrate, a buffer layer that includes as a main component AlN and is formed on the Ga2O3 substrate, a first nitride semiconductor layer that includes as a main component AlxGa1-xN (0.2<x≦1) and is formed on the buffer layer, a second nitride semiconductor layer that includes as a main component AlyGa1-yN (0.2≦y≦0.55, y<x) and is formed on the first nitride semiconductor layer, and a third nitride semiconductor layer that is formed on the second nitride semiconductor layer and includes a multilayer structure including an Inu1Alv1Gaw1N (0.02≦u1≦0.03, u1+v1+w1=1) layer and Inu2Alv2Gaw2N (0.02≦u2≦0.03, u2+v2+w2=1, v1+0.05≦v2≦v1+0.2) layers on both sides of the Inu1Alv1Gaw1N layer.

Dependencies are inferred from the claim text.