Manufacturing method of avalanche photodiode
AssigneeMitsubishi Electric Corporation
InventorsHarunaka Yamaguchi, Susumu Hatakenaka
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Abstract
A manufacturing method of an avalanche photodiode includes: forming a p-type field relaxation layer on a substrate; forming a cap layer on the p-type field relaxation layer; and forming a light absorbing layer on the cap layer, wherein a carbon is doped in the p-type field relaxation layer as a p-type dopant, the p-type field relaxation layer contains Al in a crystal composition, and a temperature-rise process from a growth temperature of the cap layer to a growth temperature of the light absorbing layer is performed in an inactive gas atmosphere without introducing a group V raw material.
Claims3
A manufacturing method of an avalanche photodiode comprising:
- forming a p-type field relaxation layer on a substrate;
- forming a cap layer on the p-type field relaxation layer;
- and
- forming a light absorbing layer on the cap layer,
- wherein a carbon is doped in the p-type field relaxation layer as a p-type dopant,
- the p-type field relaxation layer contains Al in a crystal composition, and
- a temperature-rise process from a growth temperature of the cap layer to a growth temperature of the light absorbing layer is performed in an inactive gas atmosphere without introducing a group V raw material.
Dependencies are inferred from the claim text.