A method for optically activating a semiconductor switch, wherein the switch comprises a first layer comprising a P-type semiconductor material, a second layer comprising a semiconductor material doped with a mid-band dopant, a third layer comprising an Intrinsic-type or slightly N-type semiconductor material, and a fourth layer comprising an N-type semiconductor material, wherein the method comprises the steps of:
- a. reverse biasing the switch by applying a source potential comprising a positive lead and a negative lead, wherein the positive lead is electrically connected to the fourth layer and the negative lead is electrically connected to the first layer;
- b. directing an optical energy source toward the semiconductor switch;
- and
- c. activating the optical energy source to apply sufficient optical energy to cause an electric field at a depletion layer adjacent an interface within the semiconductor switch to exceed a breakdown level, thereby enabling a flow of current.