Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a first stacked film that is formed on a semiconductor substrate via a first gate insulating film, that extends in a first direction along a main surface of the semiconductor substrate, and that is made of a first selection gate electrode and a first cap insulating film on the first selection gate electrode;
• a first memory gate electrode that is adjacent via a second gate insulating film including a first charge storage layer to a second side wall of the first selection gate electrode on an opposite side to a first side wall thereof extending in the first direction and that extends in the first direction;
• a first power supply portion that is an end portion of the first selection gate electrode in the first direction and that is exposed from the first cap insulating film in a plan view;
• and
• a first plug that is connected to an upper surface of the first power supply portion,
• wherein, the first memory gate electrode is terminated on the first cap insulating film side so as to be closer than a border between the first power supply portion and the first cap insulating film in a plan view.