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US 9,520,502 B2Granted
FinFETs having epitaxial capping layer on fin and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Hua Yu, Chih-Pin Tsao, Hou-Yu Chen
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Abstract
A FinFET and methods for forming a FinFET are disclosed. A method includes forming a semiconductor fin on a substrate, implanting the semiconductor fin with dopants, and forming a capping layer on a top surface and sidewalls of the semiconductor fin. The method further includes forming a dielectric on the capping layer, and forming a gate electrode on the dielectric.
Claims19
A method comprising:
- forming a semiconductor fin on a doped substrate, the semiconductor fin having a first region, a second region, and a third region, the second region being interposed between the first region and the third region;
- forming an isolation region on the doped substrate, the isolation region surrounding the semiconductor fin;
- implanting the semiconductor fin with dopants, the implanting the semiconductor fin with dopants causes twin plane defects in the semiconductor fin;
- after implanting the semiconductor fin with dopants, recessing the isolation region to expose at least a portion of the semiconductor fin;
- epitaxially growing a capping layer on a top surface and sidewalls of the exposed portion of the semiconductor fin in at least the second region of the semiconductor fin, the capping layer being formed over the twin plane defects;
- after epitaxially growing the capping layer, forming a gate dielectric on the capping layer in the second region of the semiconductor fin;
- and
- forming a gate electrode on the gate dielectric.
5 more elements
A method comprising:
- doping a substrate with dopants;
- forming a semiconductor fin on the doped substrate;
- forming an isolation region on the doped substrate, the isolation region surrounding the semiconductor fin;
- implanting dopants into the semiconductor fin, the implanting dopants into the semiconductor fin causing twin plane defects in the semiconductor fin;
- after implanting dopants into the semiconductor fin, recessing the isolation region to expose an upper portion of the semiconductor fin;
- and
- epitaxially growing a capping layer on a top surface and sidewalls of the semiconductor fin, the top surface and sidewalls being on the upper portion of the semiconductor fin, the capping layer being a homoepitaxial structure, the capping layer being epitaxially grown over the twin plane defects.
4 more elements
A method comprising:
- forming a semiconductor fin on a doped substrate;
- forming an isolation region on the doped substrate, the isolation region surrounding the semiconductor fin;
- implanting dopants into the semiconductor fin;
- after implanting dopants into the semiconductor fin, recessing the isolation region to expose at least a portion of the semiconductor fin;
- performing a dry etch process on the exposed portion of the semiconductor fin;
- after performing the dry etch process, epitaxially growing a capping layer on a top surface and sidewalls of the semiconductor fin;
- forming a gate dielectric on the capping layer;
- forming a gate electrode on the gate dielectric;
- forming a source region in the semiconductor fin;
- and
- forming a drain region in the semiconductor fin, the source region being on an opposite side of the gate electrode than the drain region, the capping layer extending across the top surface of the semiconductor fin from the source region to the drain region.
8 more elements
Dependencies are inferred from the claim text.