High voltage integrated circuits having improved on-resistance value and improved breakdown voltage

Abstract

A high voltage integrated device includes a semiconductor layer having a first conductivity, a source region having a second conductivity and a drift region having the second conductivity which are disposed in the semiconductor layer and spaced apart from each other by a channel region, a drain region having the second conductivity and disposed in the drift region, a gate insulation layer disposed over the channel region, a first field insulation layer and a second field insulation layer which are disposed over the drift region and between the channel region and the drain region, wherein the first field insulation layer and the second field insulation layer are spaced apart from each other, an insulation layer disposed over the drift region and located between the first and second field insulation layers, and a gate electrode disposed over the gate insulation layer, the first field insulation layer, the insulation layer, and the second field insulation layer, wherein the first field insulation layer is adjacent to the channel region and the second field insulation layer is adjacent to the drain region.

Dependencies are inferred from the claim text.