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US 9,520,492 B2Granted
Semiconductor device having buried layer
AssigneeMacronix International Co., Ltd.
InventorsChing-Lin Chan, Shyi-Yuan Wu, Cheng-Chi Lin
Life of this patent
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Abstract
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the substrate, a drift region formed in the high-voltage well, and a buried layer having the first conductivity type formed below the high-voltage well and vertically aligned with the drift region.
Claims10
A semiconductor device, comprising:
- a substrate having a first conductivity type;
- a high-voltage well having a second conductivity type and formed in the substrate;
- a drift region formed in the high-voltage well;
- a plurality of buried layers having the first conductivity type and formed below the high-voltage well and vertically aligned with the drift region, the plurality of buried layers being spaced apart from each other;
- and
- a plurality of pre-high-voltage wells having the second conductivity type, each pre-high-voltage well being formed below a respective one of the buried layers,
- wherein the drift region includes:
- a top region having the first conductivity type and formed in the high-voltage well;
- and
- a grade region having the second conductivity type and formed above the top region.
7 more elements
A semiconductor device, comprising:
- a substrate having a first conductivity type;
- a high-voltage well having a second conductivity type and formed in the substrate;
- a drift region formed in the high-voltage well;
- a plurality of first buried layers having the first conductivity type and formed below the high-voltage well and vertically aligned with the drift region, the plurality of first buried layers being spaced apart from each other;
- and
- a plurality of second buried layers having the second conductivity type and formed below the high-voltage well, each one of the plurality of second buried layers being formed between two adjacent first buried layers,
- wherein the drift region includes:
- a top region having the first conductivity type and formed in the high-voltage well;
- and
- a grade region having the second conductivity type and formed above the top region.
7 more elements
A semiconductor device, comprising:
- a substrate having a first conductivity type;
- a high-voltage well having a second conductivity type and formed in the substrate;
- a drift region formed in the high-voltage well;
- a plurality of buried layers having the first conductivity type and formed below the high-voltage well and vertically aligned with the drift region, the plurality of buried layers being spaced apart from each other;
- and
- a pre-high-voltage well having the second conductivity type and formed below the plurality of buried layers,
- wherein the drift region includes:
- a top region having the first conductivity type and formed in the high-voltage well;
- and
- a grade region having the second conductivity type and formed above the top region.
7 more elements
Dependencies are inferred from the claim text.