Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorChe-heung Kim
Life of this patent
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Abstract
A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device is a half bridged field effect transistor having a monolithic chip, and includes a semiconductor substrate with a 2-dimensional electron gas layer formed therein; a drain electrode formed on the semiconductor substrate; a first gate electrode, an output electrode, a second gate electrode, and a source electrode. The method of manufacturing the semiconductor device uses a method of monolithically forming a stack structure, which implements a half bridge function, on a substrate according to semiconductor processes.
Claims18
A semiconductor device comprising:
- a substrate;
- a first semiconductor layer on the substrate;
- a second semiconductor layer on the first semiconductor layer, the second semiconductor layer inducing a 2-dimensional electron gas layer in the first semiconductor layer;
- a first drain electrode, a first source electrode, and a first gate electrode on the second semiconductor layer and constituting a first transistor including the 2-dimensional electron gas layer;
- a second drain electrode, a second source electrode, and a second gate electrode on the second semiconductor layer and constituting a second transistor including the 2-dimensional electron gas layer;
- and
- an output electrode including the first source electrode and the second drain electrode.
A semiconductor device comprising:
- a semiconductor substrate with a 2-dimensional electron gas layer formed therein;
- first and second gate electrodes on the semiconductor substrate, wherein the first gate electrode comprises a plurality of first gate lines spaced apart from one another, and the second gate electrode comprises a plurality of second gate lines interlocked with the plurality of first gate lines;
- a plurality of first drain electrodes and first source electrodes, which constitute a plurality of first transistors having the plurality of first gate lines and the 2-dimensional electron gas layer;
- a plurality of second drain electrodes and second source electrodes, which constitute a plurality of second transistors having the plurality of second gate lines and the 2-dimensional electron gas layer;
- wherein the plurality of first drain electrodes and first source electrodes and the plurality of second drain electrodes and second source electrodes are disposed on a plurality of areas between the plurality of first and second gate lines.
Dependencies are inferred from the claim text.