Electrostatic protection device

An apparatus including an electrostatic discharge protection device comprising:

• a semiconductor well;
• a collector region doped with a first conductivity type, wherein the collector region is positioned inside of the well;
• a base region separated from the collector region and doped with a second conductivity type opposite the first conductivity type, wherein the base region is positioned inside of the well;
• an emitter region located within the base region and doped with the first conductivity type, wherein the emitter region is positioned inside of the well;
• a buried region of semiconductor vertically aligned and spaced apart from the base region and doped with the second conductivity type, wherein the buried region is positioned inside of the well;
• wherein the well, the base region and the buried region are doped with the second conductivity type, and wherein the base region and the buried region have a higher doping concentration of the second conductivity type than the well,
• wherein the collector region, the base region, and the emitter region are configured to operate as a bipolar transistor,
• wherein the bipolar transistor comprises a horizontal bipolar transistor, and wherein the buried region inhibits formation of a vertical bipolar transistor,
• wherein the apparatus is configured such that a width of the separation between the collector and base regions establishes a trigger voltage to cause the electrostatic discharge protection device to become conducting;
• and
• wherein the apparatus is configured such that a spatial parameter of the base region establishes a holding voltage of the electrostatic discharge protection device.