Method for forming semiconductor nanowire transistors

Abstract

A method for forming a semiconductor device includes forming a semiconductor substrate having at least one fin structure on an insulator on a substrate. The fin structure includes a semiconductor layer overlying a sacrificial layer. The method also includes forming a patterned dummy gate on the substrate, forming a first spacer on both sides of the dummy gate, and using the dummy gate and the first spacer as a mask to remove a portion of the semiconductor layer and the sacrificial layer. Then the sacrificial layer is etched to form recessed regions on both sides of the sacrificial layer, and a second spacer is formed to cover both sides of the sacrificial layer and expose both sides of the semiconductor layer. The method also includes performing epitaxial growth on both sides of the semiconductor layer to form source and drain regions.

Dependencies are inferred from the claim text.