Method for producing semiconductor device and semiconductor device

A semiconductor device comprising:

• a fin-shaped semiconductor layer on a semiconductor substrate;
• a first insulating film around the fin-shaped semiconductor layer;
• a second pillar-shaped semiconductor layer on the fin-shaped semiconductor layer;
• a metal contact electrode around the second pillar-shaped semiconductor layer;
• a metal contact line extending in a direction orthogonal to the fin-shaped semiconductor layer and connected to the metal contact electrode;
• a third diffusion layer in an upper portion of the fin-shaped semiconductor layer and in a lower portion of the second pillar-shaped semiconductor layer, the contact electrode connected to the third diffusion layer;
• a fourth contact surrounding an upper side wall of the second pillar-shaped semiconductor layer and connected to the contact electrode;
• and
• a fifth contact connecting an upper portion of the fourth contact to an upper portion of the second pillar-shaped semiconductor layer.