Growth of cubic crystalline phase strucure on silicon substrates and devices comprising the cubic crystalline phase structure

A method of forming a semiconductor device, the method comprising:

• providing a planar crystalline substrate comprising a groove exposing different crystal faces than the planar surface;
• depositing a buffer layer over the substrate, the buffer layer comprising at least one material chosen from MN, GaN or AlxGa1-xN, where x is between zero and one;
• epitaxially growing a semiconductor layer over the buffer layer, the epitaxially grown semiconductor layer having a cubic crystalline phase structure and a hexagonal phase structure, wherein the epitaxially grown semiconductor layer includes at least one quantum well spanning both the cubic crystalline phase structure and the hexagonal phase structure;
• providing a handle wafer;
• bonding the epitaxially grown semiconductor layer to the handle wafer;
• removing the substrate;
• and
• removing the hexagonal phase structure from the cubic crystalline phase structure.