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US 9,520,471 B1Granted
Semiconductor device having gradient implant region and manufacturing method thereof
AssigneeMacronix International Co., Ltd.
InventorsChing-Lin Chan, Cheng-Chi Lin
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Abstract
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the substrate, a source well having the first conductivity type disposed in the high-voltage well, a drift region disposed in the high-voltage well and spaced apart from the source well, and a gradient implant region having the second conductivity type and disposed in the high-voltage well between the source well and the drift region.
Claims20
A semiconductor device, comprising:
- a substrate having a first conductivity type;
- a high-voltage well having a second conductivity type and disposed in the substrate;
- a source well having the first conductivity type disposed in the high-voltage well;
- a drift region disposed in the high-voltage well and spaced apart from the source well;
- and
- a gradient implant region having the second conductivity type and disposed in the high-voltage well between the source well and the drift region.
3 more elements
A method for manufacturing a semiconductor device, comprising:
- providing a substrate having a first conductivity type;
- forming a high-voltage well having a second conductivity type in the substrate;
- forming a source well having the first conductivity type in the high-voltage well;
- forming a drift region in the high-voltage well and spaced apart from the source well;
- and
- forming a gradient implant region having the second conductivity type in the high-voltage well between the source well and the drift region.
3 more elements
Dependencies are inferred from the claim text.