US 9,520,469 B1 · Fabrication of fin structures having high germanium content

Abstract

High Ge content SiGe fins are provided, as well as improved techniques for forming high Ge content SiGe fins. A high Ge content fin is formed by obtaining one or more low Ge content SiGe fins having a hard mask deposited thereon; forming a high Ge content SiGe fin around the one or more low Ge content SiGe fins by oxidizing one or more sidewalls of the one or more low Ge content SiGe fins to create one or more oxide shells on the one or more sidewalls; removing the one or more oxide shells; and selectively removing the one or more low Ge content SiGe fins to produce a high Ge content SiGe fin device. A Fin Field Effect Transistor (FinFET) is also provided, comprising an insulating layer; and at least one high Ge content fin formed on the insulating layer, wherein the at least one high Ge content fin has asymmetric recesses into the insulator layer.

Claims18

Dependent claims

A method for forming one or more fins for a Fin Field Effect Transistor (FinFET), comprising:

obtaining one or more low Ge content SiGe fins having a hard mask deposited thereon;
forming a high Ge content SiGe fin around the one or more low Ge content SiGe fins by oxidizing one or more sidewalls of the one or more low Ge content SiGe fins to create one or more oxide shells on the one or more sidewalls;
removing the one or more oxide shells;
and
selectively removing the one or more low Ge content SiGe fins to produce a high Ge content SiGe fin device having one or more high Ge content fins.

2 more elements

Dependencies are inferred from the claim text.

Fabrication of fin structures having high germanium content

Life of this patent

Fabrication of fin structures having high germanium content

Life of this patent

Abstract

Claims18