Configuration and method to generate saddle junction electric field in edge termination
AssigneeAlpha and Omega Semiconductor Incorporated
InventorsMadhur Bobde, Lingpeng Guan, Anup Bhalla, Hamza Yilmaz
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Abstract
This invention discloses a semiconductor power device disposed in a semiconductor substrate and having an active cell area and an edge termination area the edge termination area wherein the edge termination area comprises a superjunction structure having doped semiconductor columns of alternating conductivity types with a charge imbalance between the doped semiconductor columns to generate a saddle junction electric field in the edge termination.
Claims7
A method for manufacturing a power device in a semiconductor substrate with an active cell area and an edge termination area comprising:
- forming doped semiconductor columns of alternating conductivity types in the edge termination area by opening a plurality of trenches with slightly slanted sidewalls in an N-type epitaxial layer supported on said semiconductor substrate and opening the trenches with a predefined gap between the trenches followed by implanting ions of alternating conductivities through the sidewalls then filled the trenches with an intrinsically doped material for creating the net P type doping in the termination region.
Dependencies are inferred from the claim text.