Semiconductor device having capacitor integrated therein

A method comprising:

• forming a plurality of trenches within a semiconductor wafer, the semiconductor wafer including dopant material of a first conductivity type;
• forming a diffusion region proximate to the plurality of trenches, the diffusion region including dopant material of a second conductivity type;
• and
• forming a metal-insulator-metal (MIM) capacitor within each trench of the plurality of trenches and at least partially over the semiconductor wafer,
• wherein the plurality of trenches have an aspect ratio ranging from about one hundred and twenty-five to one (125:1) to about one hundred and fifty to one (150:1) such that the metal-insulator-metal capacitor comprises a capacitive density ranging from three hundred femtoFarads per square micrometer (300 fF/um2) to two thousand femtoFarads per square micrometer (2,000 fF/um2).

A semiconductor device comprising:

• a substrate having dopant material of a first conductivity type;
• a plurality of trenches disposed within the substrate;
• a diffusion region disposed proximate to the plurality of trenches, the diffusion region having dopant material of a second conductivity type;
• and
• a dual metal-insulator-metal (MIM) capacitor formed within each trench of the plurality of trenches,
• wherein the plurality of trenches have an aspect ratio ranging from about one hundred and twenty-five to one (125:1) to about one hundred and fifty to one (150:1) such that the metal-insulator-metal capacitor comprises a capacitive density ranging from three hundred femtoFarads per square micrometer (300 fF/um2) to two thousand femtoFarads per square micrometer (2,000 fF/um2).