Surface treatment method for semiconductor device

A surface treatment method for a semiconductor device, comprising:

• forming projected patterns, each of which includes a metal-containing material, in a mold insulation layer over a substrate;
• removing the mold insulation layer by using a wet etch solution after the projected patterns are formed;
• rinsing the substrate from which the mold insulation layer is removed with deionized water after the mold insulation layer is removed;
• treating the substrate with an SC-1 (NHOH+HO+OH) solution after the substrate is rinsed with the deionized water;
• rinsing the treated substrate with deionized water after the substrate is treated with the SC-1 (NHOH+HO+OH) solution;
• forming a hydrophobic coating layer on a surface of each of the projected patterns;
• rinsing the substrate where the hydrophobic coating layer is formed with deionized water after the hydrophobic coating layer is formed, wherein a remaining unreacted hydrophobic coating layer is removed;
• and
• drying the substrate where the hydrophobic coating layer is formed,
• wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate, phosphonate having more than one hydrocarbon group,
• wherein the surface of each of the projected patterns is etched during the treating the substrate with the SC-1 solution.