Organic light emitting display and method of fabricating the same
AssigneeLG Display Co., Ltd.
InventorsKum-Mi Oh, Kyung-Mo Son, Sung-Hoon Kim
Life of this patent
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Abstract
A subpixel structure for a display device and a method of fabricating the display device are discussed. The subpixel structure can include a light emitting diode, a first switching transistor having a first gate electrode and a first active layer, a driving transistor having a second gate electrode and a second active layer, a second switching transistor including a third gate electrode and a third active layer, and at least one of the first, second and third gate electrodes is disposed between the corresponding first, second and third active layers and a substrate.
Claims17
A subpixel structure for a display device, the subpixel structure comprising:
- a light emitting diode formed on a substrate;
- a first switching transistor including a first gate electrode connected to a first scan line, a first source electrode connected to a data line, a first drain electrode, and a first active layer forming a first channel part between the first source electrode and the first drain electrode;
- a driving transistor including a second gate electrode, a second source electrode, a second drain electrode, and a second active layer forming a second channel part between the second source electrode and the second drain electrode, wherein the driving transistor is connected to the first switching transistor and the light emitting diode;
- a second switching transistor including a third gate electrode connected to a second scan line, a third source electrode, the second a third drain electrode, and a third active layer forming a third channel part between the third source electrode and the second drain electrode;
- and
- a storage capacitor connected to the first switching transistor and the driving transistor,
- wherein at least one of the first, second and third gate electrodes is disposed between the corresponding first, second and third active layers and the substrate,
- wherein the second gate electrode forms at least a portion of a top electrode of the storage capacitor, and
- wherein the second gate electrode is disposed between the second active layer and the substrate.
Dependencies are inferred from the claim text.