Integrated non-volatile memory elements, design and use

An integrated non-volatile component, comprising a surface contact with associated mating contact, a BiFeO3 layer with a concentration of free charge carriers in a range of 1015 to 1018 cm−3 used as a conductive channel having variable conductivity and the surface contact and/or the associated mating contact are/is embodied as a rectifying contact and, as a result of an applied voltage between the surface contact and the associated mating contact, a non-volatile space charge zone forms around the surface contact and/or above the mating contact in the BiFeO3 layer, wherein the surface contact is in direct contact with the BiFeO3 layer;

• and
• a drain terminal and a source terminal, wherein the surface contact is configured as a control gate terminal controlling the conductivity of the conductive channel between the drain terminal and the source terminal;
• wherein the drain terminal and the source terminal are respectively in direct contact with the BiFeO3 layer.