Implementing magnetic memory pillar design

A method for implementing a magnetic memory pillar cell comprising:

• providing a first conductor M1,
• providing a second conductor M2 with said second conductor M2 surrounded by said first conductor M1 by coating said second conductor M2 with a non-magnetic spacer layer, and forming said first conductor M1 over said second conductor M2, said first conductor M1 and said second conductor M2 being unpatterned;
• forming said first conductor M1 of a magnetic material having a metallic granularity enabling enhanced programming of the magnetic memory pillar cell, with said first conductor M1 and said second conductor M2 having different electrical conductivity, and said second conductor M2 being more electrically conductive than said conductor M1;
• and
• providing an oxide barrier extending between said first conductor M1 and a programmable input to said magnetic memory pillar cell;
• said oxide barrier being unpatterned;
• and programming the magnetic memory pillar cell with current flowing though said oxide barrier and said first conductor M1.