X-ray and optical image sensor

An imaging system comprising:

• an X-ray emitter for emitting an X-ray beam toward an object;
• a controller coupled to the X-ray emitter to control the emission of the X-ray beam;
• and
• an image sensor for capturing X-ray image data of the object and optical image data of the object, wherein the controller is coupled to the image sensor to control image capture, the image sensor comprising:
• an X-ray absorption layer configured to emit photons in response to receiving the X-ray beam;
• a plurality of photodiodes disposed in a semiconductor layer having a first side opposite a second side, wherein the plurality of photodiodes are optically coupled to receive image light of the object to generate the optical image data, and wherein the plurality of photodiodes are optically coupled to receive the photons from the X-ray absorption layer to generate the X-ray image data, the plurality of photodiodes positioned to receive the photons from the X-ray absorption layer through only the second side of the semiconductor layer and positioned to receive the image light through the first side of the semiconductor layer, wherein the image sensor is configured to receive the image light from outside the image sensor, and wherein the X-ray absorption layer is disposed proximate to the second side of the semiconductor layer;
• and
• one or more microlenses disposed proximate to the first side of the semiconductor layer, wherein the X-ray beam and the image light propagate through the one or more microlenses, and wherein the microlenses focus the image light into the plurality of photodiodes.

A method of fabricating an image sensor for capturing X-ray image data of an object and optical image data of the object, the method comprising:

• forming an X-ray absorption layer configured to emit photons in response to receiving X-ray radiation of an object;
• forming a plurality of photodiodes in a semiconductor layer having a first side opposite a second side, wherein the plurality of photodiodes are optically coupled to receive image light to generate the optical image data, and wherein the plurality of photodiodes are optically coupled to receive the photons from the X-ray absorption layer to generate the X-ray image data, the plurality of photodiodes positioned to receive the photons from the X-ray absorption layer through only the second side of the semiconductor layer and positioned to receive the image light through the first side of the semiconductor layer, wherein the image sensor is configured to receive the image light propagating from outside the image sensor, and wherein the X-ray absorption layer is disposed proximate to the second side of the semiconductor layer;
• and
• forming one or more microlenses disposed proximate to the first side of the semiconductor layer, wherein the X-ray radiation and the image light propagate through the one or more microlenses, and wherein the microlenses focus the image light into the plurality of photodiodes.