Solid-state imaging devices with impurity regions between photoelectric conversion regions and methods for manufacturing the same

An imaging device comprising:

• a semiconductor substrate having a first side and a second side opposite to the first side;
• a first photoelectric conversion region and a second photoelectric conversion region disposed in the semiconductor substrate;
• a transfer electrode disposed adjacent to the first side of the semiconductor substrate;
• a first impurity region and a second impurity region disposed in the semiconductor substrate;
• and
• an overflow barrier disposed in the semiconductor substrate;
• wherein,
• the first and second impurity regions are in contact with the overflow barrier,
• the first and second impurity regions are disposed between the first photoelectric conversion region and the second photoelectric conversion region,
• the first and second photoelectric conversion regions include an N-type impurity region,
• the first and second impurity regions include a P-type impurity region,
• the second impurity region is closer to the second side of the semiconductor substrate than the first impurity region, and
• a cross-sectional area of the first impurity region is larger than a cross-sectional area of the second impurity region.