Solid state imaging apparatus, production method thereof and electronic device
AssigneeSony Corporation
InventorsKyohei Mizuta, Tomokazu Ohchi, Yohei Chiba
Life of this patent
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Abstract
A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.
Claims11
A solid state imaging apparatus, comprising:
- a first semiconductor substrate, wherein at least a photodiode is formed in the first semiconductor substrate;
- a second semiconductor substrate, wherein at least a logic circuit is formed in the second semiconductor substrate, and wherein the first semiconductor substrate is bonded to the second semiconductor substrate,
- an insulation structure formed of an insulation material penetrating through at least a silicon layer of the first semiconductor substrate from a light receiving surface side,
- wherein the insulation material of the insulation structure includes at least one of hafnium oxide and silicon oxide,
- wherein the insulation structure is a chip surrounding guard ring disposed at a side of a scribe area, and
- wherein the insulation structure is disposed above a wiring layer of the second semiconductor substrate.
An electronic device, comprising:
- a solid state imaging apparatus, including:
- a first semiconductor substrate, wherein at least a photodiode is formed in the first semiconductor substrate,
- a second semiconductor substrate, wherein at least a logic circuit is formed in the second semiconductor substrate, and wherein the first semiconductor substrate is bonded to the first semiconductor substrate;
- an insulation structure formed of a solid insulation substance penetrating through at least a silicon layer of the first semiconductor substrate from a light receiving surface side, wherein the insulation structure is a chip surrounding guard ring disposed at a side of a scribe area, and wherein the insulation structure is disposed above a wiring layer of the second semiconductor substrate.
Dependencies are inferred from the claim text.