US 9,520,424 B2 · Black level correction (BLC) structure

Abstract

One or more techniques or systems for forming a black level correction (BLC) structure are provided herein. In some embodiments, the BLC structure comprises a first region, a second region above at least some of the first region, and a third region above at least some of the second region. For example, the first region comprises silicon and the third region comprises a passivation dielectric. In some embodiments, the second region comprises a first sub-region, a second sub-region above the first sub-region, and a third sub-region above the second sub-region. For example, the first sub-region comprises a metal-silicide, the second sub-region comprises a metal, and the third sub-region comprises a metal-oxide. In this manner, a BLC structure is provided, such that a surface of the BLC structure is flush, at least because the third region is flush, for example.

Claims20

Dependent claims

An image sensor associated with a black level correction (BLC) structure, the BLC structure comprising:

a first layer comprising silicon;
a region comprising:
a second layer comprising metal-silicide, at least some of the second layer above at least some of the first layer;
a third layer comprising metal, at least some of the third layer above the second layer;
and
a fourth layer comprising metal-oxide, at least some of the fourth layer above an uppermost surface of the third layer;
and
a fifth layer comprising passivation dielectric, at least some of the fifth layer above at least some of the fourth layer and the fifth layer in direct physical contact with at least some of a top surface of the fourth layer so as to form a lateral interface with the fourth layer.

5 more elements

Dependencies are inferred from the claim text.

Black level correction (BLC) structure

Life of this patent

Black level correction (BLC) structure

Life of this patent

Abstract

Claims20