Image sensors including non-aligned grid patterns
AssigneeSamsung Electronics Co., Ltd.
InventorsYun Ki Lee, Joonkyoung Lee
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Abstract
An image sensor includes a substrate including a first surface and a second surface, a first device isolation layer disposed in the substrate and defining a plurality of pixels in the substrate, and having a lower surface adjacent the first surface of the substrate and an upper surface adjacent the second surface of the substrate. Each of the pixels includes a photoelectric conversion element, a floating diffusion region adjacent the first surface of the substrate, and a grid pattern on the second surface of the substrate. At least one of the grid patterns is not vertically aligned with the first device isolation layer.
Claims20
An image sensor comprising:
- a substrate including a first surface and a second surface opposite the first surface;
- and
- a first device isolation layer in the substrate and defining a plurality of pixels in the substrate;
- wherein each of the plurality of pixels comprises:
- a photoelectric conversion element;
- a floating diffusion region adjacent the first surface of the substrate;
- a grid pattern on the second surface of the substrate;
- and
- a color filter on the second surface of the substrate, the color filter corresponding to the photoelectric conversion element,
- wherein at least one grid pattern is laterally offset from the first device isolation layer, and
- wherein at least one color filter is laterally offset from a corresponding one of the pixels.
An image sensor comprising:
- a substrate;
- first and second pixels in the substrate;
- a device isolation layer between the first and second pixels;
- first and second color filters on the substrate above the first and second pixels, respectively;
- and
- a grid pattern on the substrate between the first and second color filters;
- wherein the grid pattern is laterally offset from the device isolation layer, and
- wherein the first color filter is laterally offset from the first pixel.
An image sensor comprising:
- a substrate;
- a plurality of pixels in the substrate, each of the plurality of pixels comprising a photoelectric conversion element;
- a plurality of device isolation layers between respective ones of the plurality of pixels;
- a plurality of color filters on the substrate above respective ones of the plurality of pixels;
- and
- a plurality of grid patterns on the substrate and disposed between respective ones of the color filters and exposing the photoelectric conversion elements of the plurality of pixels;
- wherein the plurality of grid patterns are laterally offset from the plurality of device isolation layers, and
- wherein the plurality of color filters are laterally offset from the respective ones of the plurality of pixels.
Dependencies are inferred from the claim text.