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AssigneeBoe Technology Group Co., Ltd.
InventorsZheng Liu, Jangsoon Im, Zuqiang Wang
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The present invention provides a method for manufacturing an array substrate, an array substrate, and a display device. The method for manufacturing an array substrate, including a step of forming a thin film transistor and a storage capacitor on a substrate, the thin film transistor including a gate, a source, and a drain, and the storage capacitor including a first pole plate and a second pole plate, wherein, arranging the source, the drain, and the first pole plate in a single layer through implanting dopant ions into an amorphous silicon layer formed on the substrate by one ion-implantation process, and through crystallizing an amorphous silicon material forming the amorphous silicon layer and activating the dopant ions by a laser irradiation process. Accordingly, process steps are simplified and a process cost is reduced greatly, and the performances of the array substrate and the display device are increased.
A method for manufacturing an array substrate, including a step of forming a thin film transistor and a storage capacitor on a substrate, the thin film transistor including a gate, a source, and a drain, and the storage capacitor including a first pole plate and a second pole plate, wherein, arranging the source, the drain, and the first pole plate in a single layer firstly through implanting dopant ions into an amorphous silicon layer formed on the substrate by one ion-implantation process, and then through crystallizing an amorphous silicon material forming the amorphous silicon layer and activating the dopant ions by a laser irradiation process.
Dependencies are inferred from the claim text.