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US 9,520,408 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorTae Kyung Kim
Life of this patent
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Abstract
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a core insulating film, a channel film surrounding the core insulating film and extending to a higher level than an upper surface of the core insulating film to have a first end of the channel film exposed over the core insulating film, a channel pad formed over an inner wall of the first end of the channel film exposed over the core insulating film, and a contact plug coupled to the channel pad.
Claims12
A semiconductor device, comprising:
- a core insulating film;
- a channel film surrounding the core insulating film and extending to a higher level than an upper surface of the core insulating film to have a first end of the channel film exposed over the core insulating film;
- a channel pad formed over an inner wall of the first end of the channel film exposed over the core Insulating film;
- and
- a contact plug coupled to the channel pad.
2 more elements
A semiconductor device, comprising:
- a pipe gate;
- a drain-side stacked structure formed over the pipe gate and including first interlayer insulating films and first conductive patterns, wherein the first interlayer insulating films and the first conductive patterns are alternately stacked;
- a source-side stacked structure formed over the pipe gate and including second interlayer insulating films and second conductive patterns, wherein the second interlayer insulating films and the second conductive patterns are alternately stacked;
- a first core insulating film penetrating the drain-side stacked structure;
- a second core insulating film penetrating the source-side stacked structure;
- a third core insulating film connecting the first core insulating film and the second core insulating film and formed in the pipe gate;
- a channel film surrounding the first, the second, and the third core insulating films, wherein the channel film extends to a higher level than an upper surface of the first core insulating film to have a first end of the channel film exposed over the first core insulating film, wherein the channel film extends to a higher level than an upper surface of the second core insulating film to have a second end of the channel film exposed over the second core insulating film;
- a first channel pad formed over an inner wall of the first end of the channel film;
- a second channel pad formed over an inner wall of the second end of the channel film;
- and
- first and second contact plugs coupled to the first and the second channel pads, respectively.
8 more elements
Dependencies are inferred from the claim text.