Provision of etch stop for wordlines in a memory device

An apparatus, comprising:

• a processor;
• and
• a memory coupled with the processor, wherein the memory includes a memory array having a plurality of wordlines disposed in a staircase structure in a die, wherein the plurality of wordlines includes at least a first wordline and a second wordline disposed on top of the first wordline, wherein the first wordline includes a semiconductor layer and a silicide layer that abuts a first vertical edge of the semiconductor layer to extend the first wordline beyond a first vertical edge of the second wordline to form a stair of the staircase structure, wherein the silicide layer forms an etch stop of the first wordline for a wordline contact structure to electrically connect the first wordline with the memory array, wherein the etch stop further includes a spacer disposed to abut the silicide iayer around an end of the first wordline, wherein a top surface of the silicide layer, sidewalls of a passivation layer that separates the first wordline from the second wordline, and a space in between the first wordline and the second wordline are free from the spacer.

A method, comprising:

• forming a staircase structure comprising a plurality of wordlines of a memory array in a die, including providing a first wordline with a semiconductor layer and disposing a second wordline on top of the first wordline;
• and
• providing, in the first wordline of the plurality of wordlines, a silicide layer that abuts a first vertical edge of the semiconductor layer to extend the first wordline beyond a first vertical edge of the second wordline to form a stair of the staircase structure, the silicide layer forming an etch stop of the first wordline for a wordline contact structure to electrically connect the first wordline with the memory array, wherein forming the etch stop includes disposing a spacer to abut the silicide layer around an end of the first wordline, wherein a top surface of the silicide layer, sidewalls of a passivation layer that separates the first wordline from the second wordline, and a space in between the first wordline and the second wordline are free from the spacer.