Abrupt source/drain junction formation using a diffusion facilitation layer

A field effect transistor (FET) device, comprising:

• a diffusion facilitation layer comprising silicon germanium formed on top of a silicon semiconductor substrate;
• a doped, raised source/drain (RSD) layer formed on the diffusion facilitation layer, wherein the RSD layer is doped with one or more of arsenic and phosphorous;
• the diffusion facilitation layer having a portion thereof removed, corresponding to a region directly above a channel region of the FET device;
• and
• abrupt source and drain junctions defined in the semiconductor substrate, wherein the diffusion facilitation layer and the semiconductor substrate comprise materials such that dopant atoms from the doped RSD layer diffuse within the diffusion facilitation layer at a faster rate than with respect to the semiconductor substrate.