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US 9,520,394 B1Granted
Contact structure and extension formation for III-V nFET
AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. Basker, Alexander Reznicek
Life of this patent
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Abstract
FinFET devices including III-V fin structures and silicon-based source/drain regions are formed on a semiconductor substrate. Silicon is diffused into the III-V fin structures to form n-type junctions. Leakage through the substrate is addressed by forming p-n junctions adjoining the source/drain regions and isolating the III-V fin structures under the channel regions.
Claims12
A structure comprising:
- a semiconductor substrate;
- a plurality of columns extending from the semiconductor substrate, the columns being separated by a plurality of recesses, each of the columns including a III-V base and a III-V fin structure, the III-V fin structure comprising arsenic and being positioned on the III-V base;
- a silicon-containing layer adjoining the semiconductor substrate, the silicon-containing layer comprising a plurality of n-type source/drain regions, and
- a plurality of n-type junctions adjoining the source/drain regions, each of the junctions including silicon diffused within the III-V fin structures and arsenic diffused within the source/drain regions, wherein the silicon-containing layer includes a p-type region adjoining the n-type source/drain regions, forming a plurality of p-n junctions therewith.
1 more element
Dependencies are inferred from the claim text.