Electronic device including a capacitor structure and a process of forming the same

A process of forming an electronic device comprising:

• providing a workpiece including a buried conductive region and a semiconductor layer over the buried conductive region, wherein the semiconductor layer has a primary surface and an opposing surface, and wherein the buried conductive region is disposed closer to the opposing surface than to the primary surface;
• forming a horizontally-oriented doped region adjacent to the primary surface, wherein the horizontally-oriented doped region is at least part of a drain region or a collector of a transistor structure;
• forming a conductive electrode adjacent to the primary surface;
• forming a gate electrode of a transistor structure;
• and
• forming a trench capacitor structure after forming the gate electrode, wherein the trench capacitor is electrically connected to the buried conductive region and a current-carrying electrode of the transistor structure, and wherein the trench capacitor is spaced apart from the conductive electrode.

An electronic device comprising:

• a buried conductive region;
• a semiconductor layer having a primary surface and an opposing surface, wherein the buried conductive region is disposed closer to the opposing surface than to the primary surface, and the semiconductor layer defines a first trench having a sidewall and being adjacent to the primary surface and extending toward the buried conductive region;
• a first horizontally-oriented doped region adjacent to the primary surface;
• a first insulating layer overlying the first horizontally-oriented doped region;
• a conductive electrode overlying the first insulating layer;
• a first capacitor structure including:
• a first capacitor electrode including a first vertical conductive region adjacent to the sidewall of the first trench and extending toward the buried conductive region, wherein the vertical conductive region is electrically connected to the first horizontally-oriented doped region and the buried conductive region;
• a capacitor dielectric layer;
• and
• a second capacitor electrode within the first trench,
• wherein:
• the first capacitor structure is spaced apart from and does not underlie the conductive electrode;
• the conductive electrode has a first portion that lies substantially along a first plane and a second portion having a height that is substantially perpendicular to the first plane;
• and
• the second capacitor electrode has an uppermost location at an elevation higher than a highest elevation of the first portion of the conductive electrode.