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US 9,520,389 B1Granted
Silicon-controlled rectifier and an ESD clamp circuit
AssigneesNational Chiao Tung University, Himax Technologies Limited
InventorsChun-Yen Chang, Shiang-Shiou Yen, Shao-Chin Chang, Che-Wei Chiang
Life of this patent
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Abstract
A silicon-controlled rectifier (SCR) includes a first-type field, a second-type first field and a second-type second field disconnectedly formed in a first-type well; an entire first-type doped region formed within the first-type field; a segmented second-type doped region formed within the second-type first field; and a segmented first-type doped region formed within the second-type second field.
Claims16
A silicon-controlled rectifier (SCR), comprising:
- a first-type field, a second-type first field and a second-type second field formed in a first-type well, the first-type field, the second-type first field and the second-type second field being disconnected;
- an entire first-type doped region formed within the first-type field;
- a segmented second-type doped region formed within the second-type first field;
- and
- a segmented first-type doped region formed within the second-type second field;
- wherein ion dose of the entire first-type doped region is greater than ion dose of the first-type field, ion dose of which is further greater than ion dose of the first-type well;
- ion dose of the segmented second-type doped region is greater than ion dose of the second-type first field, ion dose of which is further greater than ion dose of the first-type well;
- and ion dose of the segmented first-type doped region is greater than ion dose of the second-type second field, ion dose of which is further greater than ion dose of the first-type well.
5 more elements
Dependencies are inferred from the claim text.