Method of forming bump structure having a side recess and semiconductor structure including the same

A method of integrated chip bonding, comprising:

• forming a conductive trace on a surface of a first work piece;
• forming a conductive bump on a surface of a second work piece, wherein the conductive bump has a first end, a second end opposite the first end, and a first side connected between the first end and the second end, wherein the first side comprises a recess;
• and
• electrically coupling the conductive trace and the conductive bump by heating the first work piece or the second work piece.

A method of integrated chip bonding, comprising:

• forming a metal trace on a surface of a first work piece, wherein the metal trace has a first width;
• forming a conductive bump having a recess onto a surface of a second work piece, wherein the conductive bump has a top surface facing away from the second work piece and a bottom surface facing the second work piece, and wherein the top surface has a second width that is larger than the first width and the bottom surface has a third width that is smaller than the second width;
• and
• forming a solder layer between the metal trace and the conductive bump, wherein the solder layer fills a part of the recess.