US 9,520,377 B2 · Semiconductor device package including bonding layer having Ag3Sn

Abstract

Semiconductor device packages and methods of manufacturing the semiconductor device packages are provided. A semiconductor device package may include a bonding layer between a substrate and a semiconductor chip, and the bonding layer may include an intermetallic compound. The intermetallic compound may be a compound of metal and solder material. The intermetallic compound may include Ag3Sn. A method of manufacturing the semiconductor device package may include forming a bonding layer, which bonds a semiconductor chip to a substrate, by using a mixed paste including metal particles and a solder material. The bonding layer may be formed by forming an intermetallic compound, which is formed by heating the mixed paste to react the metal particles with the solder material.

Claims17

Dependent claims

A semiconductor device package comprising:

a first substrate;
at least one semiconductor chip mounted on the first substrate;
a first bonding layer provided between the first substrate and the semiconductor chip, the first bonding layer including Ag3Sn grains;
and
a metal layer provided between the first bonding layer and the semiconductor chip, the metal layer including a non-solder material, the first bonding layer in contact with the metal layer and the first substrate,
wherein the first bonding layer is substantially devoid of pores,
wherein the Ag3Sn grains are substantially uniformly distributed throughout the first bonding layer, and the Ag3Sn grains are in contact with the first substrate, and
wherein the first bonding layer includes Ag material and the Ag3Sn gains, and the Ag material exists between the Ag3Sn grains.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/311,708Filed 23 Jun 2014

Priority

KR 10-2013-012957029 Oct 2013

Published

US 2015/0115452 A130 Apr 2015

Granted

13 Dec 2016

Term ends

Not estimatedThe source records don’t support an estimate.

Classification29 codes

B23K 1/0016
Specially adapted for particular articles or work: soldering of electronic components
B23K 20/023
By means of a press ; Diffusion bonding: thermo-compression bonding
B23K 20/16
Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating: with interposition…
B23K 20/233
Taking account of the properties of the materials to be welded: without ferrous layer

Semiconductor device package including bonding layer having Ag3Sn

Life of this patent

Semiconductor device package including bonding layer having Ag3Sn

Life of this patent

Abstract

Claims17