Chip comprising a phase change material based protecting device and a method of manufacturing the same

An electronic chip comprising an integrated circuit arranged on a substrate and a protection device arranged at least partially facing the integrated circuit, wherein the protection device comprises at least one capacitor comprising:

• a first electrode,
• a second electrode,
• and at least three stacked layers of phase-change materials, defiling at least two external layers and at least one internal layer interposed between said at least two external layers,
• wherein at least three stacked layers of phase-change materials are disposed at least partially between the two electrodes, wherein at least a first layer from said at least two external layers and said at least one internal layer is in an amorphous state and is configured so as to at least locally change from said amorphous state in which the capacitor has a first capacitance and/or a first resistance and to a crystalline state in which the capacitor has a second capacitance and/or a second resistance respectively different from the first capacitance and the first resistance, and wherein at least a second layer from said at least two external layers and said at least one internal layer is in a crystalline state, the protection device being electrically connected to the integrated circuit by at least one of said first or second electrodes so that the integrated circuit measures the resistance and/or capacitance of the capacitor.