Front side package-level serialization for packages comprising unique identifiers

A method of making a semiconductor device, comprising:

• providing a plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface;
• forming a functional layer as part of a build-up interconnect structure that extends over the active surface of each of the plurality of semiconductor die, the functional layer further comprising a unique identifying mark for each of the plurality of semiconductor die simultaneously with forming the build-up interconnect structure, wherein each unique identifying mark conveys a unique identity of its respective semiconductor die;
• and
• singulating the plurality of semiconductor die.

A method of making a semiconductor device, comprising:

• providing a plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface;
• forming a functional layer that extends over the active surface of each of the plurality of semiconductor die, the functional layer further comprising a unique identifying mark for each of the plurality of semiconductor die, wherein each unique identifying mark conveys a unique identity of its respective semiconductor die, wherein forming the unique identifying marks further comprises forming the unique identifying mark for each of the plurality of semiconductor die away from an exterior surface of a semiconductor package such that the unique identifying mark for each of the plurality of semiconductor die are not subject to damage at an exterior surface of the semiconductor package;
• and
• singulating the plurality of semiconductor die.

A method of making a semiconductor device, comprising:

• providing a plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface;
• forming a build-up interconnect structure or functional layer that extends over each of the plurality of semiconductor die, the build-up interconnect structure further comprising:
• a first portion comprising a unique identifying mark for each of the plurality of semiconductor die, wherein each unique identifying mark conveys information about its respective semiconductor die, and
• a second portion formed as a redistribution layer (RDL);
• and
• singulating the plurality of semiconductor die.