Semiconductor devices

A semiconductor device, comprising:

• a substrate;
• a first insulating interlayer on the substrate;
• a first conductive connector in the first insulating interlayer, the first conductive connector protruding upwardly beyond a top surface of the first insulating interlayer;
• a first diffusion blocking layer on the first insulating interlayer, the first diffusion blocking layer on an upper portion of a sidewall of the first conductive connector that protrudes beyond the first insulating interlayer;
• a first bonding layer on the first diffusion blocking layer, the first bonding layer on the upper portion of the sidewall of the first conductive connector that protrudes beyond the first insulating interlayer;
• a first shield pattern in the first bonding layer and the first diffusion blocking layer, the first shield pattern being spaced apart from and defining a perimeter around the first conductive connector;
• a second bonding layer on the first bonding layer and the first shield pattern;
• a second diffusion blocking layer on the second bonding layer;
• a second insulating interlayer on the second diffusion blocking layer;
• a second conductive connector in the second insulating interlayer, the second diffusion blocking layer, and the second bonding layer, the second conductive connector contacting a top surface of the first conductive connector;
• and
• a second shield pattern in the second bonding layer and the second diffusion blocking layer, the second shield pattern being spaced apart from and defining a perimeter around the second conductive connector.

A semiconductor device comprising:

• a substrate;
• a first conductive structure on the substrate;
• a second conductive structure on the first conductive structure;
• an insulating interlayer on a sidewall of the first conductive structure, the insulating interlayer including an oxide;
• first and second metal-diffusion-blocking layers on respective sidewalls of the first and second conductive structures, the first and second metal-diffusion-blocking layers including a nitride, and the first metal-diffusion-blocking layer being on the insulating interlayer;
• an insulating layer between the first and second metal-diffusion-blocking layers, the insulating layer including a nitride;
• and
• a first metal-diffusion-shield pattern extending in both of the insulating layer and the first metal-diffusion-blocking layer, the first metal-diffusion-shield pattern being spaced apart from the first conductive structure.