Bumpless build-up layer (BBUL) semiconductor package with ultra-thin dielectric layer

An apparatus, comprising:

• a semiconductor die comprising an integrated circuit having a plurality of external electrical contacts;
• and
• a semiconductor package housing the semiconductor die, the semiconductor package comprising:
• a layer comprising a pattern of spaced apart conductive lines coupled to the plurality of external contacts of the semiconductor die;
• a first dielectric layer disposed on and between the conductive lines of the pattern of spaced apart conductive lines;
• a second dielectric layer disposed above the first dielectric layer;
• a conductive via disposed in the first dielectric layer;
• a conductive routing line disposed in the second dielectric layer and coupled to the conductive via;
• and
• a patterned titanium nitride layer disposed directly between the first and second dielectric layers, wherein the conductive via is disposed in the patterned titanium nitride layer, and the conductive routing line is disposed on the patterned titanium nitride layer.