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US 9,520,346 B2Granted
Power semiconductor module and method for manufacturing the same
AssigneeHyundai Mobis Co., Ltd.
InventorJae Hyun Ko
Life of this patent
Estimating the term…
Abstract
The present invention relates to a power semiconductor module in which heat from the semiconductor chip is radiated not only through the buffer, but also through the lead frame to increase heat radiation efficiency, and the semiconductor chip, the buffer, and the lead frame are simultaneously bonded to increase efficiency of bonding work, and a method for manufacturing the same.
Claims7
A power semiconductor module, comprising:
- a semiconductor chip;
- a buffer coupled to the semiconductor chip;
- and
- a lead frame coupled to a lower portion of the buffer,
- wherein the buffer comprises a plate shape and is formed of copper, and an upper surface of the buffer is bonded onto a bottom surface of the semiconductor chip by an upper solder,
- wherein the lead frame comprises a plate shape and is formed of copper, and an upper surface of the lead frame is bonded onto a bottom surface of the buffer by a lower solder, and
- wherein the upper solder comprises a mixture of 3.0 to 7.0% by weight of tin and 93.0 to 97.0% by weight of antimony, and the lower solder comprises a mixture of 94.5 to 97.0% by weight of tin, 2.5 to 4.5% by weight of silver, and 0.5 to 1.0% by weight of copper.
4 more elements
Dependencies are inferred from the claim text.