US 9,520,344 B2Granted

Semiconductor module for electric power

AssigneePanasonic Intellectual Property Management Co., Ltd.

InventorKenya Yamashita

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Abstract

Included are: the third frame which is electrically connected to the first intermediate frame and is arranged above the first frame; the fourth frame which is electrically connected to the second intermediate frame and is arranged above the second frame; the electric source terminal part which is provided on an extension of the first frame; the ground terminal part which is provided on an extension of the fourth frame; and the output terminal part which is provided on an extension to which the second frame and the third frame are electrically joined, wherein the third frame and the fourth frame are arranged in parallel with each other, and the electric source terminal part, the ground terminal part and the output terminal part are arranged in a manner such that induced electric voltages, which are generated in the third frame and the fourth frame, become in reverse directions with each other.

Claims12

Dependent claims

A semiconductor module for electric power, comprising:

a first frame where plural first transistors and first diodes are arranged;
a second frame where plural second transistors and second diodes are arranged;
a first intermediate frame which is adjacent to the first frame;
a second intermediate frame which is adjacent to the second frame;
a third frame which is electrically connected to the first intermediate frame, and is arranged above the first frame;
a fourth frame which is electrically connected to the second intermediate frame, and is arranged above the second frame;
an electric source terminal which is provided on an extension of the first frame;
a ground terminal which is provided on an extension of the fourth frame;
and
an output terminal which is provided on an extension to which the second frame and the third frame are electrically joined, wherein
a drain electrode of the first transistor is connected to the first frame,
a source electrode of the first transistor and an anode electrode of the first diode are connected to the first intermediate frame with first connecting lines of metal,
a drain electrode of the second transistor is connected to the second frame,
a source electrode of the second transistor and an anode electrode of the second diode are connected to the second intermediate frame with second connecting lines of metal,
in neighborhoods of the first transistor and the second transistor, gate terminals and source terminals are arranged,
the first frame, the second frame, the first intermediate frame, the second intermediate frame, the third frame, and the fourth frame are all arranged on a heat radiating plate via an insulator which is configured with a resin-system material, and at least a part of each of the first frame, the second frame, the first intermediate frame, the second intermediate frame, the third frame, and the fourth frame is covered with a molding resin, and
the third frame and the fourth frame are arranged in parallel with each other, and the electric source terminal, the ground terminal and the output terminal are arranged in a manner such that induced electric voltages, which are generated in the third frame and the fourth frame, become in reverse directions with each other.

14 more elements

A semiconductor module for electric power, comprising:

a first metal electric-conductor-island where plural first transistors and first diodes are arranged;
a second metal electric-conductor-island where plural second transistors and second diodes are arranged;
a first intermediate metal electric-conductor-island which is adjacent to the first metal electric-conductor-island;
a second intermediate metal electric-conductor-island which is adjacent to the second metal electric-conductor-island;
a fifth frame which is electrically connected to the first intermediate metal electric-conductor-island, and is arranged above the first metal electric-conductor-island;
a sixth frame which is electrically connected to the second intermediate metal electric-conductor-island, and is arranged above the second metal electric-conductor-island;
an electric source terminal which is provided on an extension of the first metal electric-conductor-island;
a ground terminal which is provided on an extension of the sixth frame;
and
an output terminal which is connected to the second metal electric-conductor-island, where the second metal electric-conductor-island and the fifth frame electrically join, wherein
a drain electrode of the first transistor is connected to the first metal electric-conductor-island,
a source electrode of the first transistor and an anode electrode of the first diode are connected to the first intermediate metal electric-conductor-island with first connecting lines of metal,
a drain electrode of the second transistor is connected to the second metal electric-conductor-island,
a source electrode of the second transistor and an anode electrode of the second diode are connected to the second intermediate metal electric-conductor-island with second connecting lines of metal,
in neighborhoods of the first transistor and the second transistor, gate terminals and source terminals are arranged,
the first metal electric-conductor-island, the second metal electric-conductor-island, the first intermediate metal electric-conductor-island, the second intermediate metal electric-conductor-island, the fifth frame, and the sixth frame are all arranged on a heat radiating plate via an insulator which is configured with a ceramic material, and at least a part of each of the first metal electric-conductor-island, the second metal electric-conductor-island, the first intermediate metal electric-conductor-island, the second intermediate metal electric-conductor-island, the fifth frame, and the sixth frame is covered with a gel-like resin, and
the fifth frame and the sixth frame are arranged in parallel with each other, and the electric source terminal, the ground terminal and the output terminal are arranged in a manner such that induced electric voltages, which are generated in the fifth frame and the sixth frame, become in reverse directions with each other.

14 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/401,556Filed 7 May 2013
Priority: JP 2012-11245316 May 2012
Published: US 2015/0115423 A130 Apr 2015
Granted: 13 Dec 2016
Term ends: Not estimatedThe source records don’t support an estimate.

Classification34 codes

H10W 70/424
Shapes or dispositions: cross-sectional shapes
H10D 84/811
Characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs: combinations of…
H10W 40/00
Arrangements for thermal protection or thermal control
H10W 70/421
Leadframes: shapes or dispositions

Family

US 2015/0115423 A1Pre-grant publication · published 30 Apr 2015
US 9,520,344 B2This patent

From the US filing history. Foreign family members aren’t listed.

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