Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• embedding an insulating layer in a first surface of a semiconductor substrate such that a bottom surface of the insulating layer is lower than the first surface, the insulating layer having a shape of a ring, the ring having an opening inside the ring;
• forming a semiconductor integrated circuit on the first surface of the semiconductor substrate;
• forming a conductive layer on the semiconductor substrate inside the ring of the insulating layer, the conductive layer being connected to the semiconductor integrated circuit;
• forming a hole extending from a second surface of the semiconductor substrate to the bottom surface of the insulating layer and to the first surface of the semiconductor substrate inside the ring, by selectively etching the semiconductor substrate from the second surface of the semiconductor substrate, the hole having a size larger than a size of the opening in a range from the second surface to the bottom surface of the insulating layer, and having a size equal to the size of the opening in the opening;
• forming a via in the hole;
• and
• selectively removing a part of the conductive layer after forming the hole,
• wherein the conductive layer comprises a first layer and a second layer on the first layer, the part of the conductive layer is the first layer, and a size of the conductive layer is smaller than the size of the hole.